A method to estimate the strain state of SiGe / Si by measuring the bandgap

带隙法测定SiGe/Si材料的应变状态

Study on the Structure of SiGe HBT and its Process for 1.5 μ m-BiCMOS Technology

用于1.5μMBiCMOS技术的SiGeHBT结构及工艺研究

SiGe / Si HBT with a current gain of 26000 in the temperature of 77K

77K下电流增益为2.6万的SiGe/SiHBT

Analysis on Application of WAsP to Wind Energy Resource Assessment for Sige Wind Farm in Guizhou

WAsP软件在贵州四格风电场风资源评估中的应用分析

Study on the relationship between serum sIgE and allergic skin test among 100 cases allergic disease

100例过敏性疾病患者血清特异性IgE与皮试的相关性研究

Then the application possibility of heteroepitaxy and SiGe / Si superlattice material has been described .

其次，论述了异质外延和SiGe／Si超晶格材料的应用前景。

A DC transient model and AC model for SiGe base HBT \'s are also developed .

同时开发了SiGe基区HBT的直流瞬态模型和小信号模型。

Design a SiGe low noise amplifier ’ s structure with active source bias .

设计了带有有源偏置的SiGe低噪声放大器的电路结构；

Design and Fabrication of Microwave Power SiGe HBT and Novel SiGe HPT Based on Virtual Substrate

微波功率SiGeHBT与基于虚衬底的SiGeHPT的研制

ASIC Implementation of a High-speed and High-precision CORDIC Processor Based on 0.35 μ m SiGe Technology

基于0.35μmSiGe工艺的高速高精度CORDIC处理器的ASIC实现